mjd31c 3a , 100v npn plastic encapsulated transistor elektronische bauelemente 21-sep-2012 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 3 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features designed for general excellent dc current gain characteristics package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 100 v collector to emitter voltage v ceo 100 v emitter to base voltage v ebo 5 v collector current -continuous i c 3 a collector power dissipation p c 1.25 w junction and storage temperature range t j ,t stg 150 , -55~150 c electrical characteristics (t a =25c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 100 - - v i c =1ma, i e =0 collector-emitter breakdown voltage v ceo(sus) 100 - - v i c =30ma, i b =0 emitter-base breakdown voltage v (br)ebo 5 - - v i e =1ma, i c =0 collector cut-off current i ces - - 20 a v ce =100v, v eb =0 collector cut-off current i ceo - - 50 a v ce =60v, i b =0 emitter cut-off current i ebo - - 1 ma v eb =5v, i c =0 dc current gain h fe 25 - - v ce =4v, i c =1a 10 - 50 v ce =4v, i c =3a collector-emitter saturation voltage v ce(sat) - - 1.2 v i c =3a, i b =375ma base-emitter voltage v be(on) - - 1.8 v v ce =4v, i c =3a transition frequency f t 3 - - mhz v ce =10v, i c =500ma, f t =1khz note: 1.pulse test: pw Q 300 s, duty cycle Q 2%. a c d n o p g e f h k j m b d-pack (to-252) ref. millimeter ref. millimeter min. max. min. max. a 6. 35 6.8 j 2.30 ref. b 5.20 5.50 k 0. 64 0.90 c 2. 15 2.40 m 0.5 0 1.1 d 0.45 0.58 n 0.9 1. 6 5 e 6.8 7. 5 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 5 h 0. 64 1.20
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